荷兰专利NL2006279A Lithographic apparatus and method.

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公开号:NL2006279A
申请号:NL2006279
申请日:2011-02-22
公开日:2011-09-06
发明作者:Johannes Baselmans；Patrick Marcel Maria Thomassen；Gabriela Vesselinova Paeva；Francis Fahrni；Gerardus Keijsers；Heine Mulder；Willem Pongers；Joost Hageman；Mattheus Johannes Bruggen；Johannes Fransiscus Roosekrans；David James Butler
申请人:Asml Netherlands Bv；
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专利说明:

Lithographic Apparatus and Method
FIELD
The present invention relates to a lithographic apparatus and a device manufacturing method.
BACKGROUND
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern corresponding to an individual layer of the 1C, and this pattern can be imaged onto a target portion (e.g. comprising part of, one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed.
Known lithographic apparatus include so-called scanners, in which each target portion is irradiated by scanning the mask through a radiation beam in a given direction (the “scanning’-direction) while synchronously scanning the substrate parallel or anti parallel to this direction. After each scan the direction of scanning movement of the mask and the direction of scanning movement of the substrate is reversed. The substrate is also moved transverse to the scanning direction. These movements are time consuming and thus have a detrimental impact on the throughput of the lithographic apparatus (i.e. the number of substrates exposed per hour by the lithographic apparatus).
It is desirable to provide, for example a lithographic apparatus and device manufacturing method which obviates or mitigates one or more of the problems of the prior art, whether identified herein or elsewhere.
SUMMARY
According to a first aspect of the invention there is provided a lithographic apparatus comprising an illumination system configured to provide a first beam of radiation which forms a first mask illumination region and configured to simultaneously provide a second beam of radiation which forms a second mask illumination region, the first and second illumination regions being configured to simultaneously illuminate the same mask, wherein the lithographic apparatus further comprises a projection system configured to project the first radiation beam such that it forms a first substrate illumination region and configured to simultaneously project the second radiation beam such that it forms a second substrate illumination region.
According to a second aspect of the invention there is provided a lithographic apparatus comprising a projection system configured to receive a patterned beam of radiation and to separate the patterned beam of radiation into a first patterned beam of radiation and a second patterned beam of radiation, the projection system being further configured to project the first patterned beam of radiation such that it forms a first substrate illumination region and to simultaneously project the second patterned beam of radiation such that it forms a second substrate illumination region.
According to a third aspect of the invention there is provided a lithographic method comprising providing two beams of radiation using an illumination system, using the two radiation beams to illuminate two mask illumination regions, moving a mask through the two mask illumination regions such that the mask is illuminated by the two mask illumination regions and thereby patterns the two radiation beams, projecting the two radiation beams such that they illuminate two substrate illumination regions, and moving a substrate through the two substrate illumination regions such that the substrate is illuminated by the two substrate illumination regions and thereby receives the pattern carried by the two radiation beams.
According to a fourth aspect of the invention there is provided a lithographic method comprising providing a beam of radiation using an illumination system, using the radiation beam to illuminate a mask illumination region, moving a mask through the mask illumination region such that the mask is illuminated by the mask illumination region and thereby patterns the radiation beam, using a projection system to separate the patterned radiation beam into a first patterned radiation beam and a second patterned radiation beam, projecting the two patterned radiation beams such that they illuminate two substrate illumination regions, and moving a substrate through the two substrate illumination regions such that the substrate is illuminated by the two substrate illumination regions and thereby receives the pattern carried by the two radiation beams.
BRIEF DESCRIPTION OF THE DRAWINGS
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
Figure 1 schematically depicts a lithographic apparatus according to an embodiment of the invention;
Figure 2 schematically depicts two successive scanning exposures performed by a lithographic apparatus according to the prior art;
Figure 3 schematically depicts five successive scanning exposures performed by a lithographic apparatus according to the prior art;
Figure 4 schematically depicts a scanning exposure performed by a lithographic apparatus according to an embodiment of the invention;
Figure 5 schematically depicts twelve successive scanning exposures performed by a lithographic apparatus according to an embodiment of the invention;
Figure 6 schematically depicts the operation of reticle masking blades of an embodiment of the invention;
Figure 7 schematically depicts part of an illumination system according to an embodiment of the invention;
Figure 8 is an alternative depiction of the embodiment shown in figure 7;
Figure 9 schematically depicts part of an illumination system according to an alternative embodiment of the invention;
Figure 10 schematically depicts part of an illumination system of the invention;
Figure 11 schematically depicts part of the illumination system of figure 10 in more detail;
Figure 12 schematically depicts part of an illumination system according to a further alternative embodiment of the invention;
Figure 13 schematically depicts part of the illumination system shown in figure 12; Figure 14 schematically depicts a projection system according to an alternative embodiment of the invention; and
Figure 15 schematically depicts a projection system according to a further alternative embodiment of the invention.
DETAILED DESCRIPTION
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer 1C, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “mask” is used herein to refer to a device that can be used to impart a radiation beam with a pattern in its cross-section to create a pattern in a target portion of the substrate. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. Masks may be transmissive or reflective. The term “reticle” may be used instead of the term “mask”. Where the context allows, any use of the terms “mask” or “reticle” herein may be considered synonymous with a more general term “patterning device”. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The support structure holds the mask. It holds the mask in a way depending on the orientation of the mask, the design of the lithographic apparatus, and other conditions, such as for example whether or not the mask is held in a vacuum environment. The support can use mechanical clamping, vacuum, or other clamping techniques, for example electrostatic clamping under vacuum conditions. The support structure may be a frame or a table, for example, which may be fixed or movable as required and which may ensure that the mask is at a desired position, for example with respect to the projection system.
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more support structures). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein the substrate is immersed in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
Figure 1 schematically depicts a lithographic apparatus according to an embodiment of the invention. The apparatus comprises: an illumination system (illuminator) IL to condition a beam PB of radiation (e.g. DUV radiation or EUV radiation).
a support structure (e.g. a support structure) MT to support a patterning device (e.g. a mask) MA and connected to first positioning device PM to accurately position the patterning device with respect to item PL; a substrate table (e.g. a wafer table) WT for holding a substrate (e.g. a resist coated wafer) W and connected to second positioning device PW for accurately positioning the substrate with respect to item PL; and a projection system (e.g. a refractive projection lens) PL configured to image a pattern imparted to the radiation beam PB by patterning device MA onto a target portion C (e.g. comprising one or more dies) of the substrate W.
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
The illuminator IL receives a beam of radiation from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising for example suitable directing mirrors and/or a beam expander. In other cases the source may be integral part of the apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
The illuminator IL may comprise adjusting means AM for adjusting the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL generally comprises various other components, such as an integrator IN and a condenser CO. The illuminator provides a conditioned beam of radiation PB, having a desired uniformity and intensity distribution in its cross section.
The radiation beam PB is incident on the patterning device (e.g. mask) MA, which is held on the support structure MT. Having traversed the patterning device MA, the beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and position sensor IF (e.g. an interferometric device), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the patterning device MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the object tables MT and WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the positioning device PM and PW. However, in the case of a stepper (as opposed to a scanner) the support structure MT may be connected to a short stroke actuator only, or may be fixed. Patterning device MA and substrate W may be aligned using patterning device alignment marks M1, M2 and substrate alignment marks P1, P2.
The depicted apparatus may for example be used in scan mode. In scan mode, the support structure MT and the substrate table WT are scanned synchronously while a pattern imparted to the beam PB is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure MT is determined by the (de-)magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
Figure 2 shows schematically exposure of successive target portions of a substrate. For ease of description the target portions are referred to as dies although the target portions may comprise more than one die. Referring to figure 2A, a beam of radiation PB is used to illuminate a mask illumination region (which may be referred to as a mask exposure slit) as indicated by a downwardly pointing arrow. A mask MA is moved through the illuminated mask exposure slit in a scanning motion from left to right (as indicated by an arrow). When the mask MA is in the position shown in figure 2A the radiation beam PB illuminates a left hand end of the radiation mask MA. The radiation beam is patterned by the mask MA and passes through a projection system PL. The projection system PL projects the patterned radiation onto a first die C1 on a substrate W. The projection system PL has a reduction factor of 4, and the effect of the reduction factor is indicated schematically by representing the radiation beam PB using a smaller arrow. The radiation beam PB illuminates a substrate illumination region (sometimes referred as a substrate exposure slit). A right hand end of the die C1 is illuminated by the exposure slit. The substrate is moved through the illuminated substrate exposure slit from left to right in a scanning motion (as indicated by an arrow).
Referring to figures 2B and 2C, the mask MA is moved in a scanning motion from in the -y-direction whilst the substrate W is moved in a scanning motion in the y-direction. The movement takes into account the reduction factor of the projection system PL, the movement of the substrate W being one quarter of the movement of the mask MA. As a result of the movement, the mask MA moves through the mask exposure slit such that an entire patterned portion of the mask is illuminated by the mask exposure slit. Similarly, the substrate W moves such that the entire die C1 is illuminated by the substrate exposure slit.
Once exposure of the die C1 has been completed, the substrate is moved such that a die which is located behind the exposed die C1 is positioned for exposure. The movement of the substrate may be best understood by referring to figure 3. Figure 3 shows five dies C1-C5 viewed from above. The first die C1 is exposed when moving the substrate from left to right as indicated by an arrow and a rectangle SS which represents the substrate exposure slit. The substrate W is then moved such that the second die C2 may be exposed. This involves moving the substrate in the x-direction such that the second die C2 is aligned with the projections system PL and is ready to receive patterned radiation.
The exposure of the second die C2 is shown in figures 2D-F. Referring first to figure 2D, the radiation beam PB illuminates a mask exposure slit which is initially located at a right hand end of the mask MA. The projection system PL projects patterned radiation to form a substrate exposure slit which is initially at a left hand end of the second die C2. Referring to figures 2E and 2F the mask MA is moved in the y-direction in a scanning motion whilst the substrate W (and second die C2) is moved in the -y-direction. Thus, during exposure of the second die C2 the direction of movement of the mask MA is opposite to the direction of movement of the mask during exposure of the first die C1. Similarly, the direction of movement of the substrate W is opposite to the direction of movement of the substrate W during exposure of the first die C1.
As may be seen from figure 3, exposure of the third die again requires movement of the substrate in the x-direction, and requires a change of scanning movement direction of both the mask and the substrate. A change of direction of the mask and substrate is required after each die is exposed. This is time consuming since it requires the deceleration of the mask and substrate to a zero velocity and then requires acceleration of the mask and substrate to a scanning velocity in the opposite direction. Thus, the changes of direction have a negative effect on the throughput of the lithographic apparatus.
Figures 4 and 5 show schematically an example of a lithographic apparatus which overcomes or mitigates the above problem by allowing exposure of successive dies to be performed whilst scanning the substrate in the same direction.
Referring first to figure 4A, instead of providing a single radiation beam PB, two radiation beams PB1, PB2 are provided. The first radiation beam PB1 illuminates a first mask illumination region and the second radiation beam PB2 illuminates a second mask illumination region. These may be referred to as first and second mask exposure slits. When the mask MA is in the position shown figure 4A the first radiation beam PB1 illuminates a left hand end of the mask MA. The second radiation beam PB2 illuminates the centre of the mask MA. The projection system PL projects the two patterned radiation beams PB1, PB2 onto a first die C1. The projection system has a reduction factor of 4, and this indicated schematically by representing the patterned radiation beams PB1, PB2 with smaller arrows. The radiation beams PB1, PB2 illuminates two substrate illumination regions (these may be referred to as two substrate exposure slits). When the substrate is the position shown in figure 4A, the first radiation beam PB1 illuminates an exposure slit which extends across the middle of the die C1, and the second radiation beam PB2 illuminates an exposure slit which is located at a right hand end of the die C1. Thus, two mask exposures slits and two substrate exposure slits are illuminated simultaneously.
Referring to figures 4B and 4C, the mask is moved in the -y-direction whilst at the same time moving the substrate W in the y-direction. The movement of the mask MA and the substrate W is sufficient to illuminate the entire mask and entire die C1, but is significantly less than the movement of the mask and substrate required by the prior art. This is because a left hand half of the mask MA is illuminated by the first radiation beam PB1 and a right hand half of the mask is illuminated by the second radiation beam PB2. Thus, illumination of the entire mask MA is achieved by moving the mask half of the distance that was required by the prior art.
A corresponding reduction of the movement of the substrate W may also be seen in figure 4. Half of the die C1 is exposed by a first substrate exposure slit illuminated by the first radiation beam PB1, and half of the die is illuminated by a second substrate exposure slit illuminated by the second radiation beam PB2.
Referring to figure 4C, the entire first die C1 has been exposed by moving the mask MA and substrate W through a considerably shorter distance than is required by the prior art. As a result of this reduced movement, a significant additional movement of the substrate W in the y-direction is required before illumination of the second die C2 may be performed. This additional movement is shown in figures 4D and 4E. The substrate W continues travel in the y-direction. This movement may for example be at the same speed as the scanning movement of the substrate during exposure of the first die C1. During this movement of the substrate W the radiation beams are blocked (for example using reticle masking blades) such that the mask and substrate are not illuminated.
The mask is moved in the y-direction until it has returned to its original position, as shown in figure 4F. As a result of the movement of the substrate W and the mask MA, the exposure of the second die C2 is begun from an initial position of the mask MA and second die C2 which corresponds to the initial position of the mask and first die C1 shown in figure 4A. Exposure of the second die C2 is therefore performed in the same manner as exposure of the first die C1. No change of direction of the substrate W is required.
In the embodiment shown in figure 4 the first die C1 is exposed using two substrate exposure slits. There will be a zone in the middle of the first die C1 where the portion of the die that was exposed by the first substrate exposure slit will meet the portion of the die that was exposed by the second substrate exposure slit. Stitching may be used to link the two portions together (e.g. using known methods of stitching).
In a modified embodiment, the mask MA of figure 4 may be provided with patterns for two dies rather than one die. The first radiation beam PB1 may be used to project the first die onto the substrate and the second radiation beam PB2 may be used to project the second die onto the substrate. Where this is done there is no zone where the projected patterns meet, since there will be a gap between the first die and the second die. For this reason stitching may not be needed.
Figure 5 illustrates schematically exposure of twelve dies C1-12 using the embodiment of the invention. The first and second substrate exposure slits are indicated by rectangles SS1, SS2 on the first die C1. Exposure of a first row of dies C1-6 is performed with the substrate always moving in the y-direction as represented by arrows. When this row of dies has been exposed, the substrate is moved in the x-direction to allow a second row of dies C7-12 to be exposed. The second row of dies C7-12 is exposed whilst continually moving the substrate in the -y-direction.
Since the direction of scanning movement of the substrate does not need to be reversed after exposure of each die, exposure of the dies may be performed more quickly than exposure of dies using the prior art method shown in figures 2 and 3, and the throughput of the lithographic apparatus is thereby increased. Other embodiments of the invention (described further below) may provide the same advantage.
In addition to avoiding the need to reverse the direction of movement of the substrate, the embodiment of the invention also avoids the need to move the substrate in the x-direction after exposure of each die. This provides an additional saving of time and thus also improves the throughput of the lithographic apparatus. Other embodiments of the invention (described further below) may provide the same advantage.
Although they are not shown in figure 1 and figure 4, reticle masking blades may be used to control the positions of edges of the radiation beams PB1, PB2 when they are incident upon a substrate. Figure 6 shows schematically the operation of reticle masking blades during exposure of a die C8 (i.e. the second die of the second row shown in figure 5). The projection system and components of the illumination system are omitted from figure 6 for ease of illustration. The lithographic apparatus is provided with three reticle masking blades 14-16. A central reticle masking blade 14 is fixed. The left hand reticle masking blade 15 and the right hand reticle masking blade 16 are both moveable in the y-direction, and may thus be used to block radiation and allow the transmission of radiation as desired.
Referring first to figure 6A, exposure of a preceding die C7 has been completed and the next die C8 is positioned for exposure. The die C8 is indicated by a dotted line which schematically shows an area of resist that is to be exposed. A front edge of the die C8 is not yet beneath the first radiation beam PB1 and the left hand and middle reticle masking blades 15, 14 block the first radiation beam so that it is not incident upon the substrate W. The right hand and middle reticle blades 16, 14 are open so that the second radiation beam PB2 is incident upon the substrate W.
Figure 6B shows the lithographic apparatus and die C8 a short time later. The left hand blade 15 has partially opened to allow part of the first radiation beam PB1 to expose a front edge of the die C8. Movement of the left hand reticle blade 15 is synchronised with movement of the substrate W (taking into account the reduction factor of the projection system (not shown)). Thus, the left hand reticle blade 15 ensures that radiation exposes the front edge of the die C8 but does not expose outside of the die. Exposure of resist is indicated by shading in figure 6. It may be seen that in addition to a front edge of the die C8 being exposed by the first radiation beam PB1 a middle portion of the die is exposed by the second radiation beam PB2.
Figure 6C shows the lithographic apparatus and die C8 a short time later. The front edge of the die C8 has now progressed such that the left hand reticle blade 15 can be fully opened without radiation falling outside of the die C8. Both the left hand and the right hand reticle blades 15, 16 are thus fully opened. A front portion and a central portion of the die C8 are being exposed respectively by the first and second radiation beams PB1, PB2.
Figure 6D shows the lithographic apparatus and die C8 a significant time later. The front edge of the die C8 has moved well beyond the edge of the left hand reticle blade 15 and most of the die has been exposed. A rear edge of the die C8 is aligned with the right hand reticle blade 16. The right hand reticle blade 16 will begin moving towards the middle reticle blade 14 with a movement which is synchronised with the movement of the rear edge of the die.
Figure 6E shows the lithographic apparatus and die C8 a short time later. The right hand reticle blade 16 partially blocks the second radiation beam PB2 and ensures that radiation is not incident outside of the die C8. The left hand reticle blade 15 remains in a fully open position thereby allowing continued exposure of a central portion of the die C8 by the first radiation beam PB1.
Figure 6F shows the lithographic apparatus and die C8 a short time later when exposure of the die C8 has just been completed. The right hand reticle blade 16 has been used to block the second radiation beam PB2 thereby preventing radiation being incident outside of the die C8. The left hand reticle blade 15 remains open and has allowed exposure of a central portion of the die C8 to be completed. The die C8 has now been fully exposed, as schematically indicated by the grey shading. One the die C8 has been fully exposed the source SO (see figure 1) is switched off (or the radiation which it emits is blocked) to prevent further exposure of the die C8.
Once the source SO has been switched off, movement of the substrate W continues until a subsequent die C9 is positioned such that the next exposure may begin (i.e. it is positioned as shown in figure 6A). At the same time as the substrate is moving to the next exposure location the mask (not shown in figure 6) from which the die pattern is projected is returned to an initial position (e.g. as shown in figure 4). The left hand reticle blade 15 is closed and the right hand reticle blade 16 is opened. The reticle blades 15, 16 are thus returned to the position shown in figure 6A.
Movement of the reticle blades may be controlled by a control apparatus (not illustrated). The control apparatus may also control the movement of the mask and substrate, and may also control the generation of radiation by the source.
Although two radiation beams PB1, PB2 are shown in figures 4,5 and 6, more than two radiation beams may be used. For example, three radiation beams may be used. Where this is done the scanning movement of the mask and substrate required to expose the substrate may be a third of the scanning movement of the mask and substrate required by the prior art. Four or more radiation beams may be used.
In a modified embodiment, a die may be exposed as shown in figures 4A-C and the substrate W may then be moved in the x-direction in a prior art manner (e.g. as shown in figure 3) before exposing the substrate by moving the mask MA and substrate in an opposite direction. In other words, the apparatus shown in figure 4 may be used to expose a substrate using a method which is similar to the prior art method shown in figure 2. Doing this provides an increase of throughput over the prior art because the speed of the mask MA and the substrate W during exposure of a die is less than in the prior art method. As a result, it is possible to change the direction of the substrate and the direction of the mask more rapidly, thereby reducing the time delay between exposure of successive dies.
Figure 7 shows schematically one way in which the two radiation beams PB1, PB2 may be created. A single radiation beam (not shown) is incident upon a diffractive optical element 10 which comprises a diffractive grating or other diffracting structure that is configured to split the radiation beam into two radiation beams PB1, PB2. The diffractive optical element 10 may for example be of the type that is used to form a dipole illumination mode in a conventional lithographic apparatus.
The diffractive optical element 10 is located in a pupil plane of the lithographic apparatus (or adjacent to a pupil plane) and applies angular characteristic to the radiation beam such that two radiation beams are formed. A lens or group of lens 12 (referred to hereafter as the field lens group) directs the radiation beams PB1, PB2 via openings provided by reticle masking blades 14-16 onto a mask MA. The mask MA is located in a field plane of the lithographic apparatus. The first and second radiation beams PB1, PB2 illuminate two mask exposure slits MS1, MS2 shown in plan view in figure 7). The shape of the mask exposure slits MS1, MS2 is generally determined by the diffractive optical element 10. However, the reticle masking blades 14-16 may modify the shape of the exposure slits MS1, MS2 by cutting off edges of the mask exposure slits. This ensures that the mask exposure slits are provided with sharp edges. The mask exposure slits MS1, MS2 may be generally rectangular (as shown in figure 7) but may include tapering of radiation intensity at the front and back of the exposure slits (the sides which extend in the x-direction).
In addition to forming the first and second radiation beam PB, PB2 the diffractive optical element 10 may also provide a zero-order beam of radiation (not shown). This beam of radiation travels along the optical axis 0A but is blocked by the middle reticle masking blade 14 before it reaches the mask MA.
Figure 8 shows the embodiment of figure 7 but includes some features which either not present or are not illustrated in figure 7. Elements which are common to both figures 7 and 8 are provided with the same reference numerals. A diffractive optical element 10 separates an incident radiation beam (not shown) into two diverging radiation beams PB1, PB2. Afield lens group 12 is configured to configured to stop further divergence of the radiation beams PB1, PB2 and to orient the radiation beams parallel to the optical axis 0A (i.e. to collimate the radiation beams PB1, PB2). A first pair of wedges 18 are configured to increase the separation between the radiation beams PB1, PB2. A second pair of wedges 20 is configured to collimate the radiation beams PB1, PB2. The second pair of wedges 20 is moveable along the optical axis. Moving the second pair of wedges 20 further away from the first pair of wedges 18 increases the separation between radiation beams PB1, PB2. Moving the second pair of wedges 20 closer to the first pair of wedges 18 reduces the separation between the radiation beams PB1, PB1. In an alternative arrangement the first pair of wedges 18 may be moveable along the optical axis 0A and may provide the same effect as effect as the second pair of wedges. The embodiment shown in figure 8 allows the separation between the exposure slits to be adjusted. This is advantageous because it allows embodiments of the invention to be used for different die sizes (in the scanning direction) without reducing the throughput of the lithographic apparatus. The separation between the exposure slits may be adjusted using optical apparatus which is different to that shown in figure 8.
Also shown in figure 8 are lenses 22, 23 which are used to direct the radiation beams PB1, PB2 onto the mask MA. These lenses may be referred to as relay lenses. Although reticle masking blades 14-16 are not shown in figure 8, the reticle masking blades may for example be provided adjacent to the mask MA (e.g. as shown in figure 7) or may be provided after the second pair of wedges 20. The reticle masking blades may be provided in a field plane or adjacent to a field plane of the lithographic apparatus.
A further alternative embodiment is illustrated schematically in figure 9. Referring to figure 9, a diffractive optical element 10 which is configured to generate two radiation beams PB1, PB2 is not located before the field lens group 12. Instead, a field defining element 24 (which may for example be a diffractive optical element) is provided which generates a desired exposure slit shape (e.g. a rectangle). Thus, a single radiation beam PB passes through the field lens group 12 via a field plane FP to a lens 22. Reticle masking blades 26, 27 may be provided in the field plane (or adjacent to the field plane). The reticle masking blades may be used to apply sharp edges to radiation beam PB, and may be used to block the radiation beam when the mask and substrate are moved between successive exposure positions (see figures 4D and 4E). The lens 22 focuses the radiation beam PB to a pupil plane in which a diffractive optical element 10 is located (the diffractive optical element may alternatively be located adjacent to the pupil plane). In common with the diffractive optical element 10 shown in figures 6 and 7, the diffractive optical element is configured to convert the radiation beam PB into two diverging radiation beams PB1, PB2. A lens 23 collimates the first and second radiation beams PB1, PB2 and directs them onto a mask MA. Zero-order radiation transmitted by the diffractive optical element 10 may be blocked using a beam stop or other suitable apparatus (not shown).
An advantage of the embodiment shown in figure 9 is that it does not require a new design of reticle masking blades (e.g. as shown in figure 7), but instead may use a conventional pair of reticle masking blades 26, 27 which may be provided in the field plane FP after the field lens group 12 (or adjacent to the field plane).
The diffractive optical element 10 used in the embodiments shown in figures 7-9 may for example be similar to a diffractive optical element that is conventionally used to form a dipole illumination mode in a conventional lithographic apparatus.
An alternative embodiment is shown schematically in figure 10. In the alternative embodiment the first and second radiation beams are not generated using a diffractive optical element but instead are generated using a semi-transparent mirror.
In Figure 10 a radiation beam PB is incident upon a semi-transparent mirror 30. Half of the radiation beam is reflected by the semi-transparent mirror 30 to form a first radiation beam PB1. The first radiation beam PB1 passes through an optical path corrector 32 before passing through a dose controlling apparatus 34. The other half of the radiation beam PB passes through the semi-transparent mirror 30 to form a second radiation beam PB2. The second radiation beam PB2 is reflected by a mirror 36 which directs the second radiation beam through a dose controlling apparatus 34. The apparatus shown in Figure 10 may be provided before reticle masking blades (not shown) of the lithographic apparatus. For example, the apparatus may be provided instead of the diffractive optical element 10 of figures 7 and 9. Alternatively, the apparatus shown in Figure 10 may be located after reticle masking blades (not shown), for example instead of the diffractive optical element 10 of figure 9.
It is desirable that the first and second radiation beams PB1, PB2 travel along the same optical path lengths before being incident upon a mask (not shown). Because the second radiation beam PB2 passes beyond the semi-transparent mirror 30 before being directed towards the dose controlling apparatus 34 by the mirror 36, the second radiation beam will have a longer optical path length than the first radiation beam PB1 (in the absence of an optical path corrector). The optical path corrector 32 increases the optical path length travelled by the first radiation beam PB1 such that the optical path lengths travelled by the first and second radiation beams PB1, PB2 are equal (or are substantially equal). The optical path corrector 32 may for example be a material which has a refractive index greater than 1 but which is transparent to the radiation beam PB1. For example, the optical path corrector 32 may be optical glasses, e.g. fused silica or calcium fluorite.
The dose controlling apparatus 34 may be used to attenuate one of the radiation beams PB1, PB2 in order to equalise the intensities of the radiation beams and/or to equalise the exposure doses that they provide. Examples of dose controlling apparatus are described further below.
In a modified embodiment (not illustrated), the optical path corrector 32 is omitted from the apparatus. Instead, the thickness of the semi-transparent mirror 30 is selected to compensate for differences in optical path length travelled by the first and second radiation beams PB1, PB2. In this modified embodiment the semi-transparent mirror 30 has a transparent front surface and a semi-transparent back surface. Radiation which is reflected by the semi-transparent mirror 30 thus passes through the body of the semi-transparent mirror twice, whereas radiation which is transmitted by the semi-transparent mirror only passes through the body of the semi-transparent mirror once. Making the body of the semitransparent mirror 30 thicker will thus increase the path length of the first radiation beam PB1 relative to the path length of the second radiation beam PB2.
In a modified embodiment (not illustrated), two semi-transparent mirrors are provided together with a conventional mirror. The three mirrors are used to convert an incident radiation beam into three radiation beams in a manner analogous to that shown in Figure 10. The reflectivity of the first mirror may be 33%, the reflectivity of the second mirror may be 50%, and the reflectivity of the third mirror may be 100%. Optical path correctors and a dose controlling apparatus may be used.
In a modified embodiment the semi-transparent mirror may provide dose control. Figure 11 shows schematically a semi-transparent mirror 40 which may provide dose control. The semi-transparent mirror 40 comprises a plurality of fixed mirrors 42 which are spaced apart from one another, and a plurality of movable mirrors 44 which are also spaced apart from one another. The movable mirrors 44 may be moved from a position in which they are located behind the fixed mirrors 42 (as shown in Figure 11 A) to a position in which they partially project from behind the fixed mirrors (as shown in Figure 11B). When the movable mirrors 44 are located behind the fixed mirrors 42 less than half of the radiation beam PB is reflected by the fixed mirrors 42 to form a first radiation beam PB1 and more than half of the radiation beam is transmitted through gaps to form a second radiation beam PB2. When the movable mirrors 44 project from behind the fixed mirrors 42 they reflect an additional portion of the radiation beam PB, thereby increasing the portion of radiation present in the first radiation beam PB1. In addition, the movable mirrors 44 reduce the size of gaps between the fixed mirrors 42, thereby reducing the intensity of radiation which passes the adjustable mirror 40 to form the second radiation beam PB2. Thus, the movable mirrors 44 allow the relative intensities of the first and second radiation beams PB1, PB2 to be adjusted. The adjustable mirror 40 has an adjustable transmissivity. This may avoid the need to provide an additional dose controlling apparatus in the lithographic apparatus.
Configuring the fixed mirrors 42 such that less than half of the radiation beam PB is reflected by the fixed mirrors 42 to form a first radiation beam PB1 and more than half of the radiation beam is transmitted through gaps to form a second radiation beam PB2 is advantageous, because it allows the intensity of radiation in the first and second radiation beams PB1, PB2 to be adjusted to be more than 50% or less than 50% of the incident radiation beam PB.
The semi-transparent mirror 40 is not located in or near to a field plane of the lithographic apparatus, and consequently the intermittent pattern formed by the gaps between mirrors is not seen at the mask MA or at the substrate W. In addition, the intermittent pattern is formed in a direction which corresponds to the scanning direction of the lithographic apparatus (indicated by arrows in figure 11), thereby allowing the effect of the intermittent pattern to be averaged out during scanning exposures performed by the lithographic apparatus.
Figure 12 shows schematically an alternative embodiment which may be used to generate first and second radiation beams. The alternative embodiment uses a first pair of wedges 50 to separate a radiation beam PB into two parts (the separation occurring in the scan direction which is indicated in figure 12 as the y-direction). The radiation beam PB may for example have a Gaussian profile or some other profile. When the radiation beam is separated into two parts, each part may comprise half of that profile. Thus, the first radiation beam part PB1a may have a profile which comprises the left hand side of a Gaussian (or other form), and the second radiation beam part PB2a may comprise the right hand half of a Gaussian (or other form).
A second pair of wedges 52 is configured to collimate the first and second radiation beam parts PB1a, PB2a. The separation between the first and second radiation beam parts PB1a, PB2a may be adjusted by adjusting the separation between the first and second pairs of wedges 50, 52. The first radiation beam part PB1a is incident upon a beam reversal and recombination apparatus 54. The beam reversal and recombination apparatus 54 is configured to form a mirror image of the radiation beam part PB1a and then combine that with the radiation beam to form a first radiation beam PB1 which has a Gaussian form (or other form) as represented schematically in Figure 12. A second beam reversal and recombination apparatus 55 modifies the second radiation beam part PB2a to form a second radiation beam PB2 in the same manner.
Figure 13 schematically shows the first beam reversal and recombination apparatus 54. It comprises two concave mirrors 56, 57 which share the same focal point, and two semi transparent beamsplitters 58, 59. A first semi-transparent beamsplitter 58 is located at an entrance of the beam reversal and recombination apparatus 54, and a second semitransparent beamsplitter 59 is located at an exit of the beam reversal and recombination apparatus.
As shown in figure 13A, on entering the beam reversal and recombination apparatus 54, half of the first radiation beam part PB1a is reflected by the first beamsplitter 58. This half of the first radiation beam part is reflected from the lower concave mirror 57, is then reflected from the upper concave mirror 56, and half of the radiation beam part then passes out of the beam reversal and recombination apparatus through reflection by the second beamsplitter 59. In figure 13A one side of the first radiation beam part PB1a is indicated using solid line and one side is indicated using a dotted line, to allow image reversal of the radiation beam part to be seen. The half of the first radiation beam part which was reflected via the first beamsplitter 58, lower concave mirror 57, upper concave mirror 56 and second beamsplitter 59 has undergone image reversal (i.e. its profile has been flipped).
As is also shown in figure 13A, half of the radiation part which is incident upon the first beamsplitter 58 passes through the first beamsplitter and is incident upon the second beamsplitter 59. Half of this radiation passes through the second beamsplitter 59 and passes out of the beam reversal and recombination apparatus 54. This half of the radiation has not undergone image reversal (i.e. its profile has not been flipped). Thus, radiation which has undergone image reversal and radiation which has not undergone image reversal is delivered from the beam reversal and recombination apparatus 54, thereby providing the first radiation beam PB1 with a desired profile (as shown schematically in figure 12).
Figure 13A also indicates the path of radiation which is initially reflected by the first beamsplitter 58 and is then transmitted by the second beamsplitter 59. Half of this radiation may pass through the first beamsplitter 58 and add to the radiation that was initially reflected by the first beamsplitter. The other half of the radiation may be reflected by the first beamsplitter 58 and add to the radiation that was initially transmitted by the first beamsplitter.
Figure 13B also shows the beam reversal and recombination apparatus 54, but shows the route of radiation which passes through the first beamsplitter 58 and is then reflected by the second beamsplitter 59 (figure 13A shows the route of radiation which is initially reflected by the first beamsplitter 58). As may be seen from figure 13B, a portion of the radiation undergoes image reversal and a portion of the radiation does not, thereby providing the first radiation beam PB1 with a desired profile.
In the above description the beamsplitters 58, 59 reflect half of incident radiation and transmit half of incident radiation. However, the beamsplitters may for example reflect more than half of incident radiation or reflect less than half of incident radiation (the beam reversal and recombination apparatus 54 will still work correctly).
In common with other embodiments, the embodiment shown in Figures 12 and 13 may be provided at various locations within the lithographic apparatus. The embodiment may be provided before or after reticle masking blades.
The dose controlling apparatus 34 shown in Figure 10 may have a variety of different forms. The dose controlling apparatus may for example comprise a set of fingers which may be extended into or out of intersection with one of the radiation beams PB1, PB2. The fingers may for example be provided in a field plane (or adjacent to a field plane), and may extend in a direction which corresponds with the scanning movement direction of the mask MA and substrate W. Bringing a finger into intersection with a portion of one of the radiation beams will reduce the dose of radiation delivered to a die by that portion of the radiation beam. This is because the width of the exposure slit has been reduced, thereby reducing the amount of time that the die is illuminated by that portion of the exposure slit.
In an alternative embodiment the dose controlling apparatus may comprise one or more partially transmissive filters which may be brought into intersection with or removed from intersection with one of the radiation beams. For example, plates having different degrees of transmissivity may be provided. A given plate may be brought into intersection with a radiation beam in order to reduce the intensity of that radiation beam by a desired amount. In a similar embodiment, a single plate having different amounts of transmissivity at different locations may be used. The plate may be moved between for example a first position in which a radiation beam passes through a portion of the plate which has high transmissivity, and a second position in which the radiation beam passes through a portion of the plate which has lower transmissivity.
The dose controlling apparatus may for example be provided in a field plane of the lithographic apparatus, or may for example be provided adjacent to a field plane of the lithographic apparatus.
The dose controlling apparatus may be provided in an illumination system of the lithographic apparatus or may be provided in a projection system of the lithographic apparatus.
In an alternative embodiment, a variable attenuator may be used to adjust the intensity of a radiation beam. The variable attenuator may for example comprise a transmissive plate which separates a portion of the radiation beam and directs it away from the optical axis. The amount of the radiation beam which is separated by the plate may be adjusted by adjusting the orientation of the plate relative to the optical axis.
In an embodiment, more than one dose controlling apparatus may be provided for each radiation beam. For example, fingers which may be extended into or out of intersection with the radiation beam may be provided in combination with a variable attenuator or partially transmissive plate.
The dose controlling apparatus may be used to remove or reduce differences of intensity between the first and second radiation beam PB1, PB2. The dose controlling apparatus may be used to improve the uniformity of radiation delivered in an exposure slit (uniformity being considered in a direction which runs transverse to the scanning direction of the lithographic apparatus).
A further alternative embodiment of the invention is shown schematically in Figure 14. In this embodiment of the invention the mask MA is illuminated by a single radiation beam PB. The radiation beam is then separated into two radiation beams PB1, PB2 by a beam splitter 60 which is provided in a field plane in the projection system PS (or adjacent to a field plane). A first radiation beam PB1 passes through the beam splitter 60, is reflected by two mirrors 61, 62 and passes through projection optics (not shown) before being incident upon the substrate W. The second radiation beam PB2 is reflected by the beam splitter 60 and is then reflected by a mirror 63 before travelling through projection optics (not shown) and being incident upon the substrate W.
The projection system PS forms two images of the mask MA on the substrate W. Therefore, if the mask MA contains a pattern for a single die, two dies are simultaneously projected onto the substrate W.
The apparatus may be used to provide scanning projection of the mask pattern onto the substrate W. The mask MA may for example move in the -y-direction such that it passes through a mask exposure slit formed by the radiation beam PB. Similarly, the substrate W may move in the y-direction such that adjacent dies on the substrate pass through first and second substrate exposure slits formed respectively by the first and second radiation beams PB1, PB2. In this way two dies are exposed on the substrate W during a single scan of the mask MA.
Once exposure of first and second dies on the substrate W has taken place, a period of time will elapse before the continued motion of the substrate W in the scanning direction brings unexposed dies beneath the projection system PS. During this period of time the mask MA may be returned to an initial position. Thus, the apparatus as shown in Figure 14 may be used to perform a method which corresponds with that shown in Figures 4 and 5 (the primary difference between the methods being that two dies are patterned during each scanning exposure rather than one die).
In a further alternative embodiment (not illustrated) a diffractive optical element may be used instead of the beam splitter 60. The diffractive optical element may be provided in or adjacent to a pupil plane of the projection system, and may split the radiation beam PB into a pair of radiation beams PB1, PB2 (for example in the manner shown in Figure 8).
A further alternative embodiment of the invention is shown schematically in Figure 15. This embodiment corresponds with the embodiment shown in Figure 4, except that the first and second radiation beams PB1, PB2 are relatively close together when they are incident upon the mask MA, and are then provided with an increased separation by the projection system PS. The projection system PS is provided with a pair of mirrors 71, 72 in a field plane (or adjacent to a field plane). The first mirror 71 directs the first radiation beam PB1 towards a third mirror 73 which then directs the first radiation beam towards the substrate W. The second mirror 72 directs the second radiation beam PB2 towards a fourth mirror 74 which then directs the second radiation beam towards the substrate W. The first and second radiation beams PB1, PB2 may pass through projection optics (not shown) before being incident upon the substrate.
The first and second mirrors 71, 72 may be provided as two sides of a triangular prison.
The apparatus shown in Figure 15 may be used in the same manner as the apparatus shown in Figure 14. The mask MA may for example move in the -y-direction such that it passes through two overlapping mask exposure slits formed by the radiation beams PB1, PB2. Similarly, the substrate W may move in the y-direction such that adjacent dies on the substrate pass through first and second substrate exposure slits formed respectively by the first and second radiation beams PB1, PB2. In this way two dies are exposed on the substrate W during a single scan of the mask MA.
Once exposure of first and second dies on the substrate W has taken place, a period of time will elapse before the continued motion of the substrate W in the scanning direction brings unexposed dies beneath the projection system PS. During this period of time the mask MA may be returned to an initial position. The apparatus as shown in Figure 15 may thus be used to perform a method which corresponds with that shown in Figures 4 and 5 (the primary difference between the methods being that two dies are patterned during each scanning exposure rather than one die).
Although embodiments of the invention have mostly used two radiation beams PB1, PB2, embodiments may use three radiation beams, four radiation beams, or more.
Although embodiments of the invention have mostly patterned a single die at a time, embodiments of the invention may pattern more than one die simultaneously (e.g. with each radiation beam patterning a different die).
Cartesian coordinates are used in the above description to facilitate explanation of embodiments of the invention. The Cartesian coordinates are indicative only, and are not intended to imply that any components of the lithographic apparatus must have a specific orientation.
In described embodiments of the invention the scanning movement of the substrate W has been in an opposite direction to the scanning movement of the mask MA. However, this is not essential, and the scanning movement of the substrate W may be in the same direction as the mask MA.
In described embodiments of the invention the first and second radiation beams PB1, PB2 are generated using a single illumination system. However, they could be generated using separate illumination systems.
In an embodiment, the lithographic apparatus may further comprise a control system which is configured to control operation of the lithographic apparatus such that it performs one or more of the methods described above.
In order to facilitate the projection of two or more exposure slits, the projection system PL may be larger than a conventional projection system. The object field of the projection system may be larger than the object field of a conventional projection system.
Operation of any of the described embodiments of the invention my be controlled by a control apparatus (not shown). The control apparatus may control the lithographic apparatus such that it implements methods described above.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention. Other aspects of the invention are set out as in the following numbered clauses: 1. A lithographic apparatus comprising an illumination system configured to provide a first beam of radiation which forms a first mask illumination region and configured to simultaneously provide a second beam of radiation which forms a second mask illumination region, the first and second illumination regions being configured to simultaneously illuminate the same mask, wherein the lithographic apparatus further comprises a projection system configured to project the first radiation beam such that it forms a first substrate illumination region and configured to simultaneously project the second radiation beam such that it forms a second substrate illumination region.
2. The lithographic apparatus of clause 1, wherein the illumination system is configured to provide at least one additional beam of radiation which forms at least one additional mask illumination region which illuminates the mask simultaneously with the first and second mask illumination regions, and wherein the projection system is configured to project the at least one additional radiation beam such that it forms an additional substrate illumination region simultaneously with the first and second substrate illumination regions.
3. The lithographic apparatus of clause 1 or clause 2, wherein the first and second mask illumination regions overlap with each other.
4. The lithographic apparatus of any preceding clause, wherein the illumination system comprises a diffractive optical element which is configured to separate a radiation beam into the first and second radiation beams.
5. The lithographic apparatus of clause 4, wherein the illumination system is configured to prevent zero-order radiation generated by the diffractive optical element from being incident upon the mask.
6. The lithographic apparatus of any of clauses 1 to 3, wherein the illumination system comprises a partially transmissive mirror which is configured to separate a radiation beam into the first and second radiation beams.
7. The lithographic apparatus of clause 6, wherein the partially transmissive mirror has adjustable transmissivity.
8. The lithographic apparatus of clause 7, wherein the partially transmissive mirror comprises a plurality of fixed mirror elements which are separated by gaps, and a plurality of moveable mirror elements which are moveable into and out of the gaps.
9. The lithographic apparatus of any of clauses 1 to 3, wherein the illumination system comprises an optical element which is configured to separate a radiation beam into two parts, a first beam reversal and recombination apparatus configured to form a mirror image of one half of the first radiation beam part and combine it with the other half of the first radiation beam part and thereby form the first radiation beam, and a second beam reversal and recombination apparatus configured to form a mirror image of one half of the second radiation beam part and combine it with the other half of the second radiation beam part and thereby form the second radiation beam.
10. The lithographic apparatus of clause 9, wherein the optical element is a pair of wedges, each of which is configured to intersect with half of the radiation beam.
11. The lithographic apparatus of any preceding clause, wherein reticle masking blades are provided at a location which receives the first and second radiation beams in use, the reticle masking blades being configured to provide an opening for the first radiation beam and an opening for the second radiation beam.
12. The lithographic apparatus of any of clauses 1 to 10, wherein reticle masking blades are provided at a location which receives a radiation beam, the reticle masking blades being configured to provide an opening for the radiation beam before it is separated into the first radiation beam and the second radiation beam.
13. The lithographic apparatus of any preceding clause, wherein the illumination system further comprises an optical path corrector which is configured to correct the optical path travelled by one of the radiation beams such that the first and second radiation beams have the same path length or substantially the same path length.
14. The lithographic apparatus of any preceding clause, further comprising a control system configured to control the lithographic apparatus to operate according to any of clauses 16 to 23.
15. A lithographic apparatus comprising a projection system configured to receive a patterned beam of radiation and to separate the patterned beam of radiation into a first patterned beam of radiation and a second patterned beam of radiation, the projection system being further configured to project the first patterned beam of radiation such that it forms a first substrate illumination region and to simultaneously project the second patterned beam of radiation such that it forms a second substrate illumination region.
16. A lithographic method comprising: providing two beams of radiation using an illumination system; using the two radiation beams to illuminate two mask illumination regions; moving a mask through the two mask illumination regions such that the mask is illuminated by the two mask illumination regions and thereby patterns the two radiation beams; projecting the two radiation beams such that they illuminate two substrate illumination regions; moving a substrate through the two substrate illumination regions such that the substrate is illuminated by the two substrate illumination regions and thereby receives the pattern carried by the two radiation beams.
17. The method of clause 16, wherein the method further comprises: moving the mask in a first direction from an initial position during illumination of the illumination regions whilst moving the substrate in a second opposite direction; stopping illumination of the mask and returning the mask to the initial position whilst continuing to move the substrate in the second direction; moving the mask in the first direction from the initial position during illumination of the illumination regions whilst continuing to move the substrate in the second direction.
18. The method of clause 16, wherein the method further comprises: moving the mask in a first direction from an initial position during illumination of the illumination regions whilst moving the substrate in a second opposite direction; stopping illumination of the mask and moving the substrate in a transverse direction; moving the mask in the second direction during illumination of the illumination regions whilst moving the substrate in the first direction.
19. The method of clause 17 or clause 18, wherein the mask is provided with a pattern which comprises a single die.
20. The method of clause 17 or clause 18, wherein the mask is provided with a pattern which comprises two or more dies.
21. The method of any of clauses 17 to 20, wherein the method further comprises: providing an additional beam of radiation using the illumination system; using the additional radiation beam to illuminate an additional mask illumination region; moving a mask through the additional illumination region such that the mask is illuminated by the additional illumination region whilst simultaneously being illuminated by the two mask illumination regions and thereby patterns the additional radiation beams; projecting the additional radiation beam such that it illuminates an additional substrate illumination region; moving the substrate through the additional illumination region such that the substrate is illuminated by the two substrate illumination regions and the additional illumination region and thereby receives a pattern carried by the two radiation beams and the additional radiation beam.
22. The method of any of clauses 17 to 21, wherein the first and second mask illumination regions overlap with each other.
23. A lithographic method comprising: providing a beam of radiation using an illumination system; using the radiation beam to illuminate a mask illumination region; moving a mask through the mask illumination region such that the mask is illuminated by the mask illumination region and thereby patterns the radiation beam; using a projection system to separate the patterned radiation beam into a first patterned radiation beam and a second patterned radiation beam; projecting the two patterned radiation beams such that they illuminate two substrate illumination regions; moving a substrate through the two substrate illumination regions such that the substrate is illuminated by the two substrate illumination regions and thereby receives the pattern carried by the two radiation beams.

权利要求:
Claims (1)
[1]
A lithography device comprising: an exposure device adapted to provide a radiation beam; a carrier constructed to support a patterning device, the patterning device being able to apply a pattern in a section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.

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法律状态:
2012-02-01| WDAP| Patent application withdrawn|Effective date: 20120125 |

优先权:

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